Over the last 15 to 20 years, automotive power MOSFETs have evolved from a rather plain topic into a dynamic business. Power MOSFETs were selected based on their ability to tolerate the high voltage ...

A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides ...

Power MOSFET’s development was partly driven by the limitations of bipolar junction transistors (BJTs). Today, this device has been the choice in power electronics applications. In this application ...

This article is part of the TechXchange: Power Supply Design. To succeed in the world of power electronics, all it takes is a little silicon—literally. To prove it, power semiconductor companies are ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, ...

Sponsored by: Texas Instruments Even though gallium-nitride transistors are becoming a more popular solution in terms of power switching, the venerable MOSFET still can be used effectively in current ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Texas Instruments (TI) (NASDAQ: TXN) introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

Toshiba has picked its 4.9 x 6.1 x 1mm ‘SOP Advance(E)’ package for a pair of industrial n-channel mosfets: TPM1R908QM 80V 238A 1.68mΩ max TPM7R10CQ5 150V 120A 7.1mΩ max Maximum junction to case ...

Allegro MicroSystems has created a pair of ICs that transmit isolated control signals and power to silicon carbide mosfet gates. AHV85003 is the transmitter and AHV85043 is the receiver, which need to ...