Wolfspeed has entered into a Restructuring Support Agreement (RSA)with key lenders, including holders of more than 97 percent of its senior secured notes; Renesas Electronics' wholly owned US ...

The DCM32xx00 series of 2-channel digital isolators is available in the narrow 8-pin SOIC8-N package and offers stable ...

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

The demonstration design uses the ams OSRAM AS6212 temperature sensor and STMicroelectronics LIS2DW12 accelerometer boards ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High ...

APEC 2026's Organising Committee has sent out a call to qualified experts to present a Professional Education Seminar during ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a reverse blocking voltage (BV) higher than 1.7 kV after high-energy proton ...