Most electronics are built on flat, stiff boards, which makes it incredibly difficult to fit them onto curved and irregular ...
Abstract: We experimentally confirmed that the steep subthreshold slope (SS) device “PN body-tied silicon-on-insulator (SOI) field-effect transistor” can reduce the short-circuit current of a ...
Abstract: Tunnel FET is found to be a prominent candidate to address the various issues like short channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the attention of ...