The demonstration design uses the ams OSRAM AS6212 temperature sensor and STMicroelectronics LIS2DW12 accelerometer boards ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Power-SOI has been produced by SOITEC for decades in 200mm and smaller wafer sizes, with typical SOI top layer thickness in the micrometer range. Leveraging its Smart Cut™ technology, SOITEC has ...

US start-up Gallox Semiconductors has won the 2025 Hello Tomorrow Global Challenge in the Advanced Computing & Electronics category.

Yannick Bedin, CEO of Eumetrys, discusses the company’s metrology expertise, looking at the ways in which it is helping its customers to address the key challenges and opportunities they face within ...