Infineon Technologies is introducing the HybridPACK Drive G2 Fusion, establishing a new power module standard for traction ...
NoMIS Power Corporation unveiled its first range of advanced 1200 V SiC MOSFETs at ICSCRM 2024, in Raleigh, North Carolina earlier this month. The SiC MOSFET technology will also be used an upcoming ...
Navitas Semiconductor has announced GaNSlim, a new generation of integrated GaN power ICs designed to simplify and speed the ...
YASA, a UK subsidiary of Mercedes-Benz, is partnering with Formula Student 2025 as part of its ambition to inspire the next ...
Infineon has announced a partnership with Canada-based AWL-Electricity, combining Infineon's CoolGaN technology with AWL-E's ...
A 48V/180A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design ...
Navitas Semiconductor's high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) ...
Friends or foes? To answer this crucial question, let’s begin by taking a comparative look at the prevailing structures of the dominant GaN and SiC power devices, as summarised in Table 1. For this ...
14ACMOS: EU project for the next technology node in semiconductor manufacturing. By Mathias Winter, Head of Piezo Drives & ...
James Hitchcock, General Manager of Keithley Instruments, a Tektronix Company, explains how the recent acquisition of EA Elektro-Automatik means that the Tektronix portfolio of oscilloscopes and ...
The Power Sources Manufacturers Association (PSMA) has announced the selection of three finalists under consideration for its ...