NoMIS Power Corporation unveiled its first range of advanced 1200 V SiC MOSFETs at ICSCRM 2024, in Raleigh, North Carolina earlier this month. The SiC MOSFET technology will also be used an upcoming ...

Navitas Semiconductor has announced GaNSlim, a new generation of integrated GaN power ICs designed to simplify and speed the ...

YASA, a UK subsidiary of Mercedes-Benz, is partnering with Formula Student 2025 as part of its ambition to inspire the next ...

Infineon has announced a partnership with Canada-based AWL-Electricity, combining Infineon's CoolGaN technology with AWL-E's ...

A 48V/180A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design ...

Navitas Semiconductor's high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) ...

Friends or foes? To answer this crucial question, let’s begin by taking a comparative look at the prevailing structures of the dominant GaN and SiC power devices, as summarised in Table 1. For this ...

14ACMOS: EU project for the next technology node in semiconductor manufacturing. By Mathias Winter, Head of Piezo Drives & ...

Rohm Semiconductor Europe will be at electronica 2024 (November 12th to 15th in Munich) showing the latest power devices for automotive and industrial applications. Under the theme 'Empowering Growth, ...

The Power Sources Manufacturers Association (PSMA) has announced the selection of three finalists under consideration for its ...